期刊
ACS NANO
卷 13, 期 8, 页码 8926-8935出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b02621
关键词
graphene; CVD; transfer; heterostructures; charge carrier mobility
类别
资金
- EU Graphene Flagship
- ERC Grant Hetero2D
- EPSRC [EP/K016636/1, EP/K01711X/1, EP/K017144/1, EP/N010345/1, EP/L016087/1]
- Wolfson College Cambridge
- Elemental Strategy Initiative
- JSPS KAKENHI [JP15K21722]
- EPSRC [EP/K01711X/1, EP/K017144/1, EP/N010345/1, EP/K016636/1] Funding Source: UKRI
We report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to similar to 70000 cm(2) V-1 s(-1) at room temperature and similar to 120 000 cm(2) V-1 s(-1) at 9K. These are more than twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room-temperature mobilities of similar to 30 000 cm(2) V-1 s(-1). These results show that, with appropriate encapsulation and cleaning, room-temperature mobilities well above 10 000 cm(2) V-1 s(-1) can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据