期刊
ACS NANO
卷 13, 期 7, 页码 8284-8291出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b03652
关键词
molybdenum disulfide; monolayer; strain engineering; chemical vapor deposition; scanning tunneling microscopy
类别
资金
- Center for Complex Materials from First-Principles (CCM), an Energy Frontier Research Center - U.S. Department of Energy, Office of Science, Basic Energy Sciences [SC0012575]
- US Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
The ability to control nanoscale electronic properties by introducing macroscopic strain is of critical importance for the implementation of two-dimensional (2D) materials into flexible electronics and next-generation strain engineering devices. In this work, we correlate the atomic scale lattice deformation with a systematic macroscopic bending of monolayer molybdenum disulfide films by using scanning tunneling microscopy and spectroscopy implemented with a custom-built sample holder to control the strain. Using this technique, we are able to induce strains of up to 3% before slipping effects take place and relaxation mechanisms prevail. We find a reduction of the quasiparticle bandgap of about 400 meV per percent local strain measured with a minimum gap of 1.2 eV. Furthermore, unintentional nanoscale strain relaxation of van der Waals monolayer sheets can negatively impact strain engineered device performance. Here we investigate such strain relaxation mechanisms that include one-dimensional ripples and 2D wrinkles which alter the spatial electronic density of states and strain distribution on the atomic scale.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据