期刊
ACS NANO
卷 13, 期 7, 页码 7502-7507出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b02935
关键词
graphene nanoribbon; quantum dot; chemical doping; hydrogen silsesquioxane; electron irradiation
类别
资金
- National Natural Science Foundation of China [11804397]
We introduce the controllable doping from hydrogen silsesquioxane (HSQ) to graphene by changing its electron-beam exposure dose. Using HSQas the dopant, a fine-resolution electron-beam resist allows us to selectively dope graphene with an extremely high spatial resolution of a few nanometers. Therefore, we can design and demonstrate the single quantum dot (QD)-like transport in the graphene nanoribbon (GNR) with the opening of the energy gap. Moreover, we suggest a rough geometric design rule in which a relatively short and wide GNR is required for observing the single QD-like transport. We envisage that this method can be utilized for other materials and for other applications, such as p-n junctions and tunnel field-effect transistors.
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