期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 28, 页码 25140-25146出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b05589
关键词
black Si; Si photovoltaics; field-effect passivation; S passivation; (NH4)(2)S
资金
- National Research Foundation of Korea (NRF) - Korean government (MEST) [2017R1A2B4002842]
- International Collaborative Energy Technology R&D Program of the KETEP from the Ministry of Trade, Industry and Energy, Republic of Korea [20168520011370]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20168520011370] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2017R1A2B4002842] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We demonstrated surface passivation of a black Si-based solar cell using an (NH4)(2)S solution to mitigate surface recombination velocity. Incorporated S at the interface between atomic-layer-deposited Al2O3 and black Si by (NH4)(2)S solution treatment boosted the density of negative fixed charges, S-enhanced field-effect passivation. Furthermore, NH4OH generated during (NH4)(2)S solution treatment removed the defective Si phase at the black Si surface, the surface cleaning effect. The optimized (NH4)(2)S solution treatment significantly enhanced the internal quantum efficiency up to similar to 17.2% in the short wavelength region, suggesting suppressed surface recombination. As a result, photoconversion efficiency of the cell increased from 11.6 to 13.5%, by 16% compared to the control cells without (NH4)(2)S solution treatment.
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