期刊
SCIENCE ADVANCES
卷 5, 期 5, 页码 -出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.aav7282
关键词
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资金
- MEXT
- JSPS KAKENHI [JP16H06346, JP15K17714, JP26102012, JP25000003, JP16H04140]
- JST ERATO
- MEXT HPCI Strategic Programs for Innovative Research (SPIRE) [hp150112, hp140128]
- Overseas Research Fellowship Program of the Japan Society for the Promotion of Science
- MEXT Nanotechnology Platform Program (Molecule and Material Synthesis)
A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important to obtain the global phase diagram surrounding the Mott insulating state. However, the parameter available for controlling the ground state of most Mott insulating materials is one-dimensional owing to technical limitations. Here, we present a two-dimensional ground-state mapping for a Mott insulator using an organic field-effect device by simultaneously tuning the bandwidth and bandfilling. The observed phase diagram showed many unexpected features such as an abrupt first-order superconducting transition under electron doping, a recurrent insulating phase in the heavily electron-doped region, and a nearly constant superconducting transition temperature in a wide parameter range. These results are expected to contribute toward elucidating one of the standard solutions for the Mott-Hubbard model.
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