A multi-level bipolar memristive device based on visible light sensing MoS2 thin film

Transition Metal Dichalcogenides (TMDs) holding a graphene like 2D structure, offer a vast area of applications in nanoscale electronics. TMDbased on MoS2, was thermally grown on ITO coated substrate to perform as a transparent switching layer. The structural and chemical properties of as synthesized MoS2 nanoparticles and thin films have been studied by using x- ray diffraction analysis and scanning electron microscopy, while memory application is manifested by fabricating Al/MoS2/ITO devices. Detailed electrical characterizations suggested that the device shows bipolar resistive switching with low operating voltage, multilevel capability, long retention capacity, presenting its potential as an application in high- density data storage field. In addition, the excellent photo-response capability of the device enriches its execution in light sensing electronic devices along with the resistive switching property.