期刊
ADVANCED SCIENCE
卷 6, 期 10, 页码 -出版社
WILEY
DOI: 10.1002/advs.201900024
关键词
Ag nanodots; cross-point; one-selector-one-resistor (1S1R); selectors; threshold switch
资金
- National Science Foundation of China [61851404, 61674092, 61874169]
- MOST of China [2016YFA0201801]
- Beijing Municipal Science and Technology Project [Z181100003218001]
- Beijing Innovation Center for Future Chips
Leakage interference between memory cells is the primary obstacle for enlarging X-point memory arrays. Metal-filament threshold switches, possessing excellent selectivity and low leakage current, are developed in series with memory cells to reduce sneak path current and lower power consumption. However, these selectors typically have limited on-state currents (<= 10 mu A), which are insufficient for memory RESET operations. Here, a strategy is proposed to achieve sufficiently large RESET current (approximate to 2.3 mA) by introducing highly ordered Ag nanodots to the threshold switch. Compared to the Ag thin film case, Ag nanodots as active electrode could avoid excessive Ag atoms migration into solid electrolyte during operations, which causes stable conductive filament growth. Furthermore, Ag nanodots with rapid thermal processing contribute to forming multiple weak Ag filaments at a lower voltage and then spontaneous rupture as the applied voltage reduced, according to quantized conductance and simulation analysis. Impressively, the Ag nanodots based threshold switch, which is bidirectional and truly electroforming-free, demonstrates extremely high selectivity >10(9), ultralow leakage current <1 pA, very steep slope of 0.65 mV dec(-1), and good thermal stability up to 200 degrees C, and further represents significant suppression of leakage currents and excellent performances for SET/RESET operations in the one-selector-one-resistor configuration.
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