期刊
NANOMATERIALS
卷 9, 期 4, 页码 -出版社
MDPI
DOI: 10.3390/nano9040633
关键词
V-defect; InGaN; GaN QWs; LEDs; NSOM; quantum efficiency
类别
资金
- National Natural Science Foundation of China [61574114]
- National Key Research and Development Program of China [2016YFB0400801]
- fundamental research funds for the central universities [Z201805198, XJJ2017011]
The size of the V-defects in the GaN/InGaN-based quantum wells blue light-emitting diode (LED) was intentionally modified from 50 nm to 300 nm. High resolution photoluminescence and electroluminescence of a single large V-defect were investigated by near-field scanning optical microscopy. The current distribution along the {10-11} facets of the large defect was measured by conductive atomic force microscopy. Nearly 20 times the current injection and dominant emission from bottom quantum wells were found in the V-defect compared to its vicinity. Such enhanced current injection into the bottom part of quantum wells through V-defect results in higher light output power. Reduced external quantum efficiency droops were achieved due to more uniform carrier distribution. The un-encapsulated fabricated chip shows light output power of 172.5 mW and 201.7 mW at 400 mA, and external quantum efficiency drop of 22.3% and 15.4% for the sample without and with large V-defects, respectively. Modified V-defects provide a simple and effective approach to suppress the efficiency droop problem that occurs at high current injection, while improving overall quantum efficiency.
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