期刊
ADVANCED MATERIALS INTERFACES
卷 6, 期 11, 页码 -出版社
WILEY
DOI: 10.1002/admi.201900042
关键词
ferroelectricity; hafnia; orthorhombic phase; oxygen vacancies; sputtering
资金
- European Union's Horizon 2020 research and innovation program [780302]
- Humboldt postdoctoral fellowship from Alexander von Humboldt Foundation
- NRF (National Research Foundation of Korea) - Ministry of Education [NRF-2018R1C1B5086580]
- German Ministry of Economic Affairs and Energy (BMWi) project [16IPCEI310]
- State of North Carolina
- National Science Foundation [ECCS-1542015]
Thin film metal-insulator-metal capacitors with undoped HfO2 as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The influence of film thickness and annealing temperature is characterized by electrical and structural methods. After annealing, the films show distinct ferroelectric properties. Grazing incidence X-ray diffraction measurements reveal a dominant ferroelectric orthorhombic phase for thicknesses in the 10-50 nm range and a negligible non-ferroelectric monoclinic phase fraction. Sputtering HfO2 with additional oxygen during the deposition decreases the remanent polarization. Overall, the impact of oxygen vacancies and interstitials in the HfO2 film during deposition and annealing is correlated to the phase formation process.
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