Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate

The performance of semiconductor devices on silicon can be severely degraded by the presence of dislocations incurred during heteroepitaxial growth. Here, the physics of the defect mechanisms, characterization of epitaxial structures, and device properties of waveguide photodetectors (PDs) epitaxially grown on (001) Si are presented. A special GaAs-on-V-grooved-Si template was prepared by combining the aspect ratio trapping effects, superlattice cyclic, and strain-balancing layer stacks. A high quality of buffer structure was characterized by atomic force microscopy (AFM) and electron channeling contrast imaging (ECCI) results. An ultralow dark current density of 3.5 x 10(-7)A/cm(2) at 300 K was measured under -1 V. That is 40x smaller than the best reported value of epitaxially grown InAs/GaAs quantum dot photodetector structure on GaP/Si substrate. Low frequency noise spectroscopy was used to characterize the generation and recombination related deep levels. A trap with an activation energy of 0.4 eV was identified, which is near the middle bandgap. With low frequency noise spectroscopy along with the current-voltage and capacitance-voltage characterizations, the recombination lifetime of 27 mu s and trap density of 5.4 x 10(12) cm(-3) were estimated.