4.6 Article

Observation of Complete Photonic Bandgap in Low Refractive Index Contrast Inverse Rod-Connected Diamond Structured Chalcogenides

期刊

ACS PHOTONICS
卷 6, 期 5, 页码 1248-1254

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.9b00184

关键词

direct laser writing; two-photon lithography; chemical vapor deposition; chalcogenide materials; photonic bandgap; three-dimensional photonic crystals

资金

  1. Engineering and Physical Sciences Research Council (EPSRC) [EP/M009033/1, EP/M008487/1, EP/M024458/1, EP/N00762X/1]
  2. EPSRC [EP/N00762X/1, EP/M009033/1, EP/M008487/1, EP/M024458/1] Funding Source: UKRI

向作者/读者索取更多资源

Three-dimensional complete photonic bandgap materials or photonic crystals block light propagation in all directions. The rod-connected diamond structure exhibits the largest photonic bandgap known to date and supports a complete bandgap for the lowest refractive index contrast ratio down to n(high)/n(low) similar to 1.9. We confirm this threshold by measuring a complete photonic bandgap in the infrared region in Sn-S-O (n similar to 1.9) and Ge-Sb-S-O (n similar to 2) inverse rod-connected diamond structures. The structures were fabricated using a low-temperature chemical vapor deposition process via a single-inversion technique. This provides a reliable fabrication technique of complete photonic bandgap materials and expands the library of backfilling materials, leading to a wide range of future photonic applications.

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