期刊
PHYSICAL REVIEW X
卷 9, 期 2, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevX.9.021011
关键词
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资金
- Army Research Office (ARO) [W911NF-17-1-0274, W911NF-12-1-0607]
- DOE [DE- FG02-03ER46028]
- NSF through the University of Wisconsin-Madison MRSEC [DMR-1121288]
- NWO VIDI Grant
- ERC
- NWO Zwaartekracht QSC
We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system, here giving a 92% fidelity estimate for the controlled-Z gate. Interestingly, with character randomized benchmarking, the two-qubit gate fidelity can be obtained by studying the additional decay induced by interleaving the two-qubit gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.
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