期刊
NATURE COMMUNICATIONS
卷 10, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41467-019-09669-x
关键词
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资金
- Research Grants Council of Hong Kong (GRF) [PolyU 153033/17P]
- Research Grants Council of Hong Kong (CRF) [C7036-17W]
- PolyU Grants [G-UABC, 1-ZVGH]
- NSFC [11804286]
Ferroelectrics allow for a wide range of intriguing applications. However, maintaining ferroelectricity has been hampered by intrinsic depolarization effects. Here, by combining first-principles calculations and experimental studies, we report on the discovery of robust room-temperature out-of-plane ferroelectricity which is realized in the thinnest monolayer MoTe2 with unexploited distorted 1T (d1T) phase. The origin of the ferroelectricity in d1T-MoTe2 results from the spontaneous symmetry breaking due to the relative atomic displacements of Mo atoms and Te atoms. Furthermore, a large ON/OFF resistance ratio is achieved in ferroelectric devices composed of MoTe2-based van der Waals heterostructure. Our work demonstrates that ferroelectricity can exist in two-dimensional layered material down to the atomic monolayer limit, which can result in new functionalities and achieve unexpected applications in atomic-scale electronic devices.
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