期刊
IEEE PHOTONICS JOURNAL
卷 11, 期 2, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2019.2907788
关键词
Waveguides; mid infrared; photonic integrated circuits; silicon photonics
We designed and demonstrated TE-mode arbitrary power splitters based on adiabatic mode evolution. The power splitters are designed with a footprint of smaller than 12 x 2.9 mu m(2), fabricated on a 400-nm silicon-on-insulator platform, requiring only a single etch step. The optimization process and the conditions for arbitrary-power splitting are performed using three-dimensional-FDTD simulations. We prove this concept through the fabrication of asymmetrical adiabatic evolution-based power splitters with splitting ratios of 50:50, 60:40, and 70:30. The fabricated devices are shown to agree closely with simulation results. Broadband operation with low insertion loss of 0.11-0.6 dB is demonstrated across the 3.66-3.89 mu m wavelength range (230 nm). This component has applications in a multitude of areas such as spectroscopic optical sensing and optical phased arrays photonic integrated circuits etc.
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