Numerical-experimental study on polishing of silicon wafer using magnetic abrasive finishing process

Silicon wafer as a brittle material is extensively used in semiconductors. The surface quality of this material significantly affects the quality and efficiency of related components. In this study, the coupled algorithm of SPH/FEM is used to simulate the surface polishing of silicon wafers with Magnetic Abrasive Finishing process. The effects of rotational speed and machining gap on percent change in surface roughness (%Delta R-a) and material removal (MR) are comprehensively analyzed with simulations and experiments. Furthermore, the material removal mechanism in wafers was investigated by using AFM. Our observations showed that both micro-fracture and micro-cutting mechanisms might happen and it highly depends on polishing parameters. Results of the simulations and experimental data showed that MR and %Delta R-a value increase with increasing rotational speed and decreasing machining gap. According to our experimental findings, maximum %Delta R-a and MR are 65% and 39.09 mg, respectively.