Quantum simulation of a junctionless carbon nanotube field-effect transistor with binary metal alloy gate electrode

In this paper, a quantum simulation study that highlights the role of linearly graded binary metal alloy (LGBMA) gate in improving the performance of coaxially gated junctionless carbon nanotube field-effect transistor (JL CNTFET) is presented. The computational approach is based on solving the Schrodinger equation using the non-equilibrium Green's function (NEGF) formalism self-consistently coupled with the Poisson equation in the ballistic limit. The proposed device is called junctionless work function engineered gate carbon nanotube field-effect transistor (JL WFEG CNTFET). The simulation results reveal that the proposed design improves the ambipolar property, tunneling leakage current, and subthreshold swing in comparison to the conventional structure. It has also been found that the proposed JL WFEG CNTFET exhibits an improved switching behavior than that of the conventional JL CNTFET, where an enhancement in terms of on-state to off-state current ratio, intrinsic delay, and power-delay product has been recorded. The obtained results make the JL CNTFET with coaxial LGBMA gate as a promising candidate for futuristic ultra-scaled, high-speed, and low-power applications.