期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 131, 期 -, 页码 21-29出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2019.05.028
关键词
Gallium oxide; Pulsed laser deposition; X-ray diffraction; Optical transmittance; Spectroscopic ellipsometry; Optical properties
资金
- National Natural Science Foundation of China [61367004, 61504030]
A series of Ga2O3 films grown on sapphire substrate by pulsed laser deposition with different growth temperature (400-1000 degrees C) and different thickness (69-332 nm) were studied by X-ray diffraction, optical transmittance and spectroscopic ellipsometry. The phase was transformed from amorphous to polycrystalline beta-Ga2O3 structure with increasing growth temperature. Refractive indexes increase with increasing thickness or growth temperature of the films in the transparent area, where the effect of film thickness is much more significant than that of growth temperature. The Urbach tail observed in absorption edge by ellipsometry combined with the transmittance spectra and the XRD intensities illustrate that higher growth temperature or thicker thickness can improve the crystal quality of films. The band gap of Ga2O3 films decrease with increasing growth film thickness and elevated experimental temperature (25-600 degrees C), and the quantitative analysis of temperature-dependent band gap was conducted by using the Varshni equation.
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