期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 13, 期 7, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201900121
关键词
antisite defects; bismuth telluride; chalcogenide compounds; conduction switching; reversible semiconductor switches
Bismuth telluride based alloys are electronic semiconductors, which exhibit n- or p-type conduction due to the formation of Te vacancies or antisite defects, i.e., substitution of Bi on Te site or vice versa. Here, it is demonstrated that the temperature dependent Seebeck coefficient of Bi2Te2.7Se0.3 exhibits a reversible change in conduction from p- to n-type at temperatures >487 K without exhibiting any structural transformation. The detailed characterization revealed that conversion of Bi-Te/Se antisite defects into Te vacancies is responsible for the p-n transition. The observed p-n transition makes Bi2Te2.7Se0.3 an ideal candidate for temperature controlled electronic switches.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据