期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 216, 期 11, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201801027
关键词
flexible devices; GaN films; graphene; van der Waals epitaxy
资金
- National Key Research and Development Program of China [2017YFB0404100]
- project of the Priority Academic Program Development (PAPD) of Jiangsu Higher Education Institutions
Van der Waals epitaxy (vdWE) of GaN films on two-dimensional (2D) materials can overcome a lattice mismatch during crystalline growth. Moreover, this type of epitaxy allows the GaN films to be released from 2D materials because of the weak van der Waals force. However, it is difficult to directly grow a single-crystalline film on graphene. Here, using metal-organic chemical vapor deposition (MOCVD), transferable single-crystalline GaN films are synthesized on multilayer graphene (MLG)/SiC. The films exhibit a flat and continuous surface morphology and c-axis orientation. Moreover, the GaN films are released from the graphene and transferred to flexible substrates by direct mechanical exfoliation. Furthermore, flexible ultraviolet (UV) photosensitive devices are fabricated and show excellent photoelectric performance in the UV-range. This research lays a foundation for the application of GaN films in foldable-display and flexible-devices.
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