期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 216, 期 14, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201900104
关键词
Ag migration; memristor; two-dimensional MoS2
资金
- National Key R&D Program of China [2017YFA0206202]
- National Science Foundation of China [51471093, 116741901]
- National Key Scientific Instruments and Equipment Development Project [2013YQ120353]
Electrochemical metallization memories (ECM)-based memristors are widely regarded as potential electronic devices for neuromorphic computing. However, in ECM-based memristors, the formation of metallic conducting filament in insulating layer will cause an abrupt current increase, making it hard for analog neuromorphic emulation. Here, a memristor fabricated by using two-dimensional (2D) semiconductor MoS2 that can provide atomically smooth and semi-insulating surface as the medium for electric-field-driven migration of conducting filaments is proposed. This memristor based on the Ag ions migration on 2D MoS2 surface exhibits gradual conductance change behavior. Microstructure characterization shows that such gradual conductance change behavior can be attributed to the formation of conducting filament composed of a chain of metallic Ag nanoparticles of approximate to 5 nm at ON-state device. By comparing with biological experimental data, it is found that our device can well mimic the learning behavior of Drosophila. Finding shows the potential to realize stable analog ECM-based memristors and paves the way for fabricating large-scale memristor network.
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