期刊
NANO LETTERS
卷 19, 期 6, 页码 3821-3829出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b00959
关键词
Selective area epitaxy; MOCVD; nanowires; InGaAs/InP quantum wells; single nanowire LEDs
类别
资金
- Australian Research Council
- Australian Government
- Australian Centre for Advanced Photovoltaics
We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device. It is also found that the electroluminescence properties are closely related to the distinctive triangular morphology with an inclined facet of the quantum well nanowire. Our study provides important new insights for further design, growth, and fabrication of high-performance quantum well-based nanowire light sources for a wide range of future optoelectronic and photonic applications.
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