Relative humidity sensing properties of indium nitride compound with oxygen doping on silicon and AAO substrates

The research used a DC sputtering system to grow indium nitride compound doped oxygen sensing film, which could be applied in the fabrication of relative humidity sensor. In this study, the design of two specific substrates, including silicon substrate and anodic aluminum oxide (AAO) substrate, were of some uses for relative humidity sensor fabrication to enhance the sensitivity. Besides, the influence of different substrates on responsivity was also explored to verify the sensing performances of indium nitride compound doped oxygen element in relative humidity sensor. The resistance response of InN:O sensing device using silicon substrate was better than that using AAO substrate. The RH adsorption and desorption time of InN:O sensing device using silicon substrate were 94 s and 35 s, respectively. The capacitance response of InN:O sensing device using AAO substrate was better than that using silicon substrate. The RH adsorption and desorption times of InN:O sensing device using AAO substrate were 289 s and 286 s respectively.