期刊
MICRO & NANO LETTERS
卷 14, 期 10, 页码 1052-1055出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/mnl.2018.5825
关键词
wide band gap semiconductors; annealing; spin coating; energy gap; thin film transistors; electron mobility; semiconductor thin films; semiconductor growth; gallium compounds; electrical conductivity; surface morphology; wide-bandgap semiconductor; molecular-beam epitaxy; thin-film transistors; aqueous-solution spin-coating method; wide bandgap Ga2O3 films; ultraviolet optoelectronics; high power electronics; chemical vapour deposition; electrical properties; optical properties; morphological properties; post-deposition annealing; n-type conductivity; electron mobility; Ga2O3
资金
- Fundamental Research Funds for the National 111 Center [B12026]
- Natural Science Foundation of Shaanxi Province [2017JM6049]
- Natural Science Foundation of China [61604119]
- Class General Financial Grant from the China Postdoctoral Science Foundation [2016M602771]
Ga2O3 is a wide bandgap oxide semiconductor material with the bandgap value only second in magnitude to diamond among known semiconductors. As a wide-bandgap semiconductor, Ga2O3 has emerged as a new competitor to silicon carbide and III-nitrides in various applications of ultraviolet optoelectronics and high power electronics. However, almost all the devices are based on the Ga2O3 grown by molecular-beam epitaxy or chemical vapour deposition, which is time-consuming and expensive. In this work, the authors report on thin-film transistors based on wide bandgap Ga2O3 films grown by aqueous-solution spin-coating method. The morphological, optical and electrical properties of the films and devices are investigated using a range of characterisation techniques, whilst the effects of post-deposition annealing are also investigated. Both as fabricated and post-annealed Ga2O3 films are found to be very smooth and exhibit wide energy bandgaps of around 4.8 and 4.9 eV, respectively. Thin-film transistors based on the grown Ga2O3 films show n-type conductivity with the maximum electron mobility of 0.1 cm(2)/Vs.
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