期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 93, 期 -, 页码 339-344出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2018.12.031
关键词
ZnO-based gas sensor; Plasma immersion ion implantation; Fast time response; High sensitivity; Low working temperature
类别
资金
- MCTIC (Ministry of Science, Technology, Innovation and Communications), from Brazil
- CAPES (Coordination for the Improvement of Higher Education Personnel), from Brazil
Zinc oxide (ZnO) based gas sensors with sensitivities reaching 90% and time responses as low as two seconds for acetylene sensing (1 vol%), were produced by means of plasma immersion ion implantation and deposition (PIII &D). In the process, after the generation of an argon glow discharge, metallic zinc is vaporized, partially ionized and implanted/deposited into/onto silicon substrates without the aid of catalysts or buffer layers. Calcination is performed after treatment in atmospheric pressure at 500 degrees C, for 10 h, leading to the achievement of polycrystalline ZnO nanostructures. The resistance change of the sensor was monitored by varying the respective working temperature from 140 degrees C up to 280 degrees C for three different acetylene concentrations (1, 2, 3 vol%). Besides the high sensitivity and the fast response time, the recovery time was also measured and the repeatability of the sensor was tested by feeding and cutting the working gas supply into the measuring system at regular time intervals.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据