期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 141, 期 15, 页码 6141-6145出版社
AMER CHEMICAL SOC
DOI: 10.1021/jacs.9b01396
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- DST [DST/TMD/MES/2k17/24]
Recently single crystals of layered SnSe have created a paramount importance in thermoelectrics owing to their ultralow lattice thermal conductivity and high thermoelectric figure of merit (zT). However, nanocrystalline or polycrystalline SnSe offers a wide range of thermoelectric applications for the ease of its synthesis and machinability. Here, we demonstrate high zT of similar to 2.1 at 873 K in two-dimensional nanoplates of Ge-doped SnSe synthesized by a simple hydrothermal route followed by spark plasma sintering (SPS). Anisotropic measurements also show a high zT of similar to 1.75 at 873 K parallel to the SPS pressing direction. Ge doping (3 mol %) in SnSe nanoplates significantly enhances the p-type carrier concentration, which results in high electrical conductivity and power factor of similar to 5.10 mu W/cm K-2 at 873 K. High lattice anharmonicity, nanoscale grain boundaries, and Ge precipitates in the SnSe matrix synergistically give rise to the ultralow lattice thermal conductivity of similar to 0.18 W/mK at 873 K.
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