Operations of hydrogenated diamond metal-oxide-semiconductor field-effect transistors after annealing at 500 °C

Operations for hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) after annealing at 500 degrees C are investigated. SiOx films are employed as oxide insulators for the II-diamond MOSFETs. Before annealing, the current output maximum, on/off ratio, and subthreshold swing for the SiOx/H-diamond MOSFET are -53.3 mA mm(-1), 1.4 x 10(9), and 88 mV dec(-1), respectively. After annealing at 500 degrees C for as long as 60min, although leakage current density of the SiOx/H-diamond MOS capacitor increases, good operations and distinct pinch-off characteristics are observed for the SiOx/H-diamond MOSFET with the above electrical properties of -2.6 mA mm(-1), 1.4 x 10(4), and 530 mV dec(-1), respectively. Stable electrical characteristics are confirmed for the annealed SiOx/H-diamond MOSFET after 35 cycles repeat measurements. This study is meaningful to the development of H-diamond MOSFETs for high-temperature applications.