4.5 Article Proceedings Paper

Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors

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JOURNAL OF ELECTRONIC MATERIALS
卷 48, 期 10, 页码 6145-6151

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SPRINGER
DOI: 10.1007/s11664-019-07255-x

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Infrared detector; unipolar barrier; nBn; mid-wavelength infrared; type II superlattice

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We recently reported mid-wavelength infrared (MWIR) InAs/InAsSb type II strained-layer superlattice (T2SLS) unipolar barrier detectors and focal-plane arrays with significantly higher operating temperature than InSb. Herein, we document the development leading to the MWIR InAs/InAsSb T2SLS detectors at the NASA Jet Propulsion Laboratory. We also briefly compare the InAs/InAsSb T2SLS with some other approaches.

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