期刊
JOURNAL OF CRYSTAL GROWTH
卷 514, 期 -, 页码 45-48出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2019.02.042
关键词
Molecular beam epitaxy; GaAsN; Electron concentration; Electron activation energy; Si activation ratio; Doping mechanism
资金
- Mitsubishi Materials Corporation
The Si doping mechanism is systematically investigated in dilute nitride GaAsN grown by radio frequency plasma assisted molecular beam epitaxy (RF-MBE). We change growth temperature, Si impurity concentration ([Si]), and nitrogen composition ([N]). The relationship between Si activation ratio (alpha) and [N] are evaluated using X-ray diffraction (XRD) 2 theta-omega and Hall effect measurement. As [N] in GaAsN increases, alpha drastically decreases, which is ascribed to mechanisms of inactive Si donors such as a cluster of Si and N at an As site ((Si-N)(As)). We find that the main factor of inactive Si donors in GaAsN depends on both [Si] and [N].
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