Influence of trimethylaluminum predoses on the growth morphology, film-substrate interface, and microstructure of MOCVD-grown AlN on (111)Si

Aluminum nitride (AlN) was deposited on (111) silicon by metalorganic chemical vapor deposition after varied trimethylaluminum predoses. Growth morphologies, film-substrate interfaces, and film microstructures were examined using scanning electron microscopy, atomic force microscopy, X-ray diffraction, and transmission electron microscopy. In samples grown with predoses, lateral growth was observed over faceted patches formed during the predose. Three-dimensional growth was observed to seed from small islands on the surface of these patches and eventually overgrow them. The three-dimensional growth mode was similar to that observed when AlN was grown without a predose, resulting in similar morphologies in all films, regardless of predose, after the islands coalesced. The AlN-silicon interface was found to be predominantly amorphous when no predose was used. However, narrow regions were observed over which the film was in atomic registry with the substrate. This indicates AlN nucleates in epitaxy with the substrate and amorphous silicon nitride forms between nucleation sites due to ammonia exposure. Films grown with predoses had structurally abrupt interfaces, suggesting aluminum within the observed patch features inhibits the reaction between ammonia and silicon at the onset of growth. A structure distinct from both wurtzite AlN and diamond cubic silicon was observed at the substrate interface in films grown with a predose, consistent with either zinc blende AlN or a strained Si/Al alloy. A mosaic microstructure was observed in all films, grown with or without predoses, which consisted of sub-boundaries formed by clusters of threading dislocations. Threading dislocations, separated by hundreds of nanometers, were found to be tilted along common directions, providing evidence for a dislocation bending mechanism possibly enhanced by the predose.