期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 58, 期 -, 页码 -出版社
IOP Publishing Ltd
DOI: 10.7567/1347-4065/ab0f1b
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资金
- ARPA-E SWITCHES program [DE-AR0000454]
- NSF NNCI program [ECCS-1542081]
- New York State
- NSF MRSEC program [DMR-1719875]
GaN PolarMOS is a vertical power transistor incorporating the unique polarization-induced bulk doping scheme in III-nitrides for the body p-n junction. We report the realization of this device, wherein the vertical channel, source contact, and body contact regions are successfully formed using three steps of selective-area epitaxial regrowth, all by molecular beam epitaxy (MBE). The fabricated PolarMOS has an excellent on-current of >500 mA mm(-1) and a specific on-resistance of 0.66 m Omega.cm(2). The reverse breakdown mechanisms of the PolarMOS are investigated. First, a pronounced source-drain vertical leakage is identified and attributed to the passivation of the buried p-type body, which is subsequently resolved by the sidewall activation method. With the body leakage eliminated, the breakdown voltage is found to be limited by a highly conductive path along the regrowth sidewall interface using the conductive scanning probe technique, despite the absence of apparent structural defects. (C) 2019 The Japan Society of Applied Physics
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