期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 58, 期 -, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/1347-4065/ab0ad3
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资金
- Ministry of Science and Technology, Taiwan [NSC 101-2221-E-009-049-MY3, MOST 104-2221-E-009-028-MY3, MOST 107-2622-E-009-003 -CC2, MOST 107-2221-E-009 -009 -MY2]
Microwave plasma using a gas mixture of N-2 and H-2 has been applied for the nitridation of m-plane sapphire substrate to form a thick epitaxial AlN film. The X-ray diffraction results show that the AlN films formed on the sapphire surface by nitridation for a period from 10-60 min are in (1010) orientation and have an epitaxial relationship with the substrate. The thickness of the nitride film increases with nitridation time and approaches about 0.5 mu m after nitridation for 1 h, while the film surface becomes rough. The film quality is reasonably good, as evaluated with the X-ray rocking curve of (1010) AlN. Faceted voids in the sapphire substrate underneath the AlN are also observed with inclined a-plane facets after nitridation. (C) 2019 The Japan Society of Applied Physics
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