期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 58, 期 -, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/1347-4065/ab07a0
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资金
- Ministry of Science and Technology, Taiwan [NSC101-2221-E-009 -049 -MY3, MOST 104-2221-E-009 -028 -MY3, MOST 107-2622-E-009-003 -CC2, MOST 107-2221-E-009 -009 -MY2]
Nitridation of sapphire to form epitaxial AlN by microwave plasma containing nitrogen gas has been investigated to be an efficient process. Structural characterization with chemical analysis by X-ray diffraction and X-ray photoelectron spectroscopy shows that an epitaxial AlN film containing oxygen can form on sapphire by using pure nitrogen plasma. Furthermore, nitridation with N-2/H-2 plasma not only improves the crystallinity of the epitaxial AlN film without oxygen, but also significantly increases the nitridation rate to 9 nm min(-1), resulting in 270 nm thick AlN for 30 min plasma nitriding. (C) 2019 The Japan Society of Applied Physics
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