期刊
IET OPTOELECTRONICS
卷 13, 期 5, 页码 240-246出版社
WILEY
DOI: 10.1049/iet-opt.2018.5173
关键词
buffer layers; segregation; annealing; solar cells; organic semiconductors; excitons; dissociation; conducting polymers; thermal stability; conventional OSC structure; fill factor; BL-OSS; elevated annealing conditions; pure P3HT interlayer; PCE; thermal stability analysis; buffered layer P3HT; P3HT:PCBM organic solar cells; buffered layer organic solar cell; post anneal treatment; post annealing; different time duration; BL-OSC structure; post-annealing time duration; annealing dependent study; power conversion efficiency; hole transport layer; photoactive layer; BL-OSC drops; time 0; 0 min to 20; 0 min; temperature 120; 0 degC
资金
- Meit Y, MCIT, Government of India
Here to determine the thermal stability of buffered layer organic solar cell (BL-OSC), the effect of post anneal treatment has been studied. To investigate the effect of post annealing, the organic solar cells (OSCs) are annealed at the 120 degrees C for different time duration. It has been observed that the BL-OSC structure exhibits the better thermal stability. Further, as the authors vary the post-annealing time duration from 0 min to 20 min, the power conversion efficiency (PCE) in the case BL-OSC drops by similar to 20%, whereas in conventional OSC, the PCE drops by similar to 35%. This annealing dependent study shows that, in conventional OSC structure an increase in phase segregation between donor and acceptor molecules reduces exciton dissociation and charge separation, this leads to sharp increase in series resistance and significant reduction in fill factor of the device. Whereas in the case of BL-OSS, there is a minimum reduction in the fill factor, which also determines the superior carrier collection and low recombination on the elevated annealing conditions. Further, the experimental results show that, in comparison with the conventional OSC structure, inserting the pure P3HT interlayer between PEDOT:PSS (hole transport layer) and P3HT:PCBM (photoactive layer) improves the PCE of the device by 34%.
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