期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 66, 期 4, 页码 710-715出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2019.2905218
关键词
400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET); BVDS variations; laterally diffused metal-oxide-semiconductor (LDMOS); radiation effects; SOI; technology computer-aided design (TCAD) simulations; total ionizing dose (TID)
资金
- Beijing Microelectronics Technology Institute (BMTI)
The breakdown voltage (BVDS) variation of 400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistors (NLDMOSFETs) is examined after exposure to a total ionizing dose (TID). The results for OFF bias and ON bias are explored.For the OFF bias, BVDS increases first and then degrades with accumulated dose. For the ON bias, the irradiated device shows soft breakdown after irradiation. The physical mechanisms for these variations are analyzed and confirmed by technology computer-aided design (TCAD) simulation.
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