4.7 Article

Fully Integrated Bidirectional CMOS-MEMS Flow Sensor With Low Power Pulse Operation

期刊

IEEE SENSORS JOURNAL
卷 19, 期 9, 页码 3415-3424

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2019.2891784

关键词

CMOS MEMS flow sensor; instrumentation amplifiers; readout integrated circuit; Wheatstone bridge

资金

  1. NPRP through the Qatar National Research Fund (a member of the Qatar Foundation) [NPRP9-421-2-170]
  2. Australian Research Council [DP130104374]
  3. Guangzhou STI Commission [201704030101]
  4. Guangdong Science and Technology [2017B050506001]

向作者/读者索取更多资源

Leveraging More-than-Moore technology, we demonstrate an integrated CMOS MEMS flow sensor via a very compact system on chip (SoC) that can sense the bidirectional N-2 gas flow. Our SoC features a very low-noise instrumentation amplifier that is implemented on a CMOS wafer and serves as a readout integrated circuit for a thermoresistive micro-calorimetric flow sensor which is fabricated on a MEMS wafer. A compact heterogeneous integration is achieved by combining the two wafers via the proprietary InvenSense AIN process. The measured sensitivity of our CMOS MEMS flow sensor is 98 mV/scam which is three times better than the state-of-the-art counterpart. The flow range measured by our SoC is from -26 to 26 m/s (from -50 to 50 sccm). Moreover, the pulsed heater operation makes this proposed SoC flow sensor a very low power (<9 mW) and, thus, a promising candidate for the Internet-of-Things applications in smart home/green buildings.

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