期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 31, 期 11, 页码 889-892出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2019.2911876
关键词
Integrated optics device; lithium niobite; modulators
资金
- Collins Aerospace, National Science Foundation (NSF) [ECCS-1740296]
- DARPA SCOUT Program [W31P4Q-15-1-0013]
- City University of Hong Kong
- Program of China Scholarships Council
Electro-optic phase modulators are critical components in modern communication, microwave photonic, and quantum photonic systems. Important for these applications is to achieve modulators with low half-wave voltage at high frequencies. Here, we demonstrate an integrated phase modulator, based on a thin-film lithium niobite platform, which simultaneously features small on-chip loss (similar to 1 dB) and low half-wave voltage over a large spectral range (3.5-4.5 V at 5-40 GHz). By driving the modulator with a strong 30-GHz microwave signal corresponding to around four half-wave voltages, we generate an optical frequency comb consisting of over 40 sidebands spanning 10 nm in the telecom L-band. The high-electro-optic performance combined with the high-RF power-handling ability (3.1 W) of our integrated phase modulator is crucial for future photonics and microwave systems.
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