期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 4, 页码 574-577出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2898217
关键词
Density-of-state; interface state; InGaZnO thin-film transistor
资金
- National Research Foundation of Korea (NRF) through the Korean Government [Ministry of Education, Science and Technology (MEST)] [2016R1A5A1012966, 2017R1A2B4006982, 18ZB1800, 2016M3A7B4909668]
- Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [18ZB1800] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We propose an experimental method to decompose the interface (insulator/channel) trap density (Dit) and sub-gap density-of-state in the entire defect (gtot) of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). This method involving various active layers of different thicknesses is used for determining the origin of defects and for process optimization. These results can be used to determine clearly the contributions to the origin of the defect. Oxygen-related and deep states near the conduction band minimum (EC) were strongly affected by the interface region. Tail states near EC, on the other hand, were strongly influenced by the active layer. The proposed method provides physical insight and key guidelines for optimizing the performance of a-IGZO TFTs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据