期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 4, 页码 550-553出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2899258
关键词
RRAM; switching; OFF conduction; Schottky emission; ballistic heat transport; device failure
资金
- Semiconductor Research Corporation [2016LM-2654]
In spite of extensive research, the physics of electric transport in the OFF (high resistance) state of resistive random access memory remains poorly understood. Here, we propose a theory that explains the observed activation nature of that transport, its exponential non-ohmicity, variations between nominally identical structures, and failure trends. Our theory proceeds from the finding that the diffusion transport mechanisms must be ruled out as leading to nonphysically high temperatures (T similar to 4000-5000 K) well above melting. The Schottky emission remains acceptable due to its underlying ballistic transport by similar to 1 eV electrons spreading the Joule heat over much larger distances without melting. Taking into account, the random fields of charged defects the Schottky emission enables one to describe the device variability and failures.
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