期刊
ELECTROCHIMICA ACTA
卷 316, 期 -, 页码 133-142出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2019.05.110
关键词
Titanium dioxide nanotube arrays; Copper nanowire arrays; Core-shell structure; Resistive switching
资金
- National Natural Science Foundation of China [11575025, U1832176]
- Science and Technology Project of Beijing [Z171100002017008]
- Fundamental Research Funds for the Central Universities
Electrochemical nanomaterial-based resistive switching devices (memristors) have recently attracted significant research interest because of their low cost and potential applications in nonvolatile data storage and artificial neural networks. In this paper, we report an electrochemical method to produce a novel memristor based on copper nanowire-titanium dioxide nanotube arrays (TNTAs), a core-shell composite material. TNTAs are fabricated using a cheap and effective electrochemical anodization method, and high-density copper nanowires are synthesized via excess-electrodeposition with a novel peeling-off strategy. This novel memristor shows both analogue and digital resistive switching properties by controlling the electroforming process. The R-off/R-on ratio of the digital memristor remains greater than 40 during 1000 consecutive I-V sweeps. The device shows good endurance over 10(4) pulse cycles, with an R-off/R-on ratio greater than 20. Furthermore, the data retention time can be maintained at least for 10(4) s. The outstanding digital resistive switching performance can be attributed to the numerous parallel copper nanowire nanoelectrodes inside the film. (C) 2019 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据