Fabrication of spray derived nanostructured n-ZnO/p-Si heterojunction diode and investigation of its response to dark and light

Fluorine doped ZnO thin films were grown by chemical spray pyrolysis technique of zinc acetate and ammonium fluoride, and the effect of fluorine content on structural, optical and electrical properties were evaluated. The structural, morphological, optical properties of ZnO films were investigated by XRD (X-ray diffraction), AFM (Atomic force microscopy), SEM (Scanning electron microscop) and UV Vis spectroscopy, respectively. According to results, it was observed that all films had polycrystalline texture with hexagonal wurtzite crystal structure and film surface were made up of nano-scale grains, varied by fluorine content. Optical properties showed that optical band gap energy of ZnO changed from 3.28 to 3.24 eV with F content. Shrinkage effect was assessed as the cause in the variation of optical band gap values. Finally, current-voltage (I-V) analysis was performed in Au/ZnO:F/p-Si device in dark and light conditions and certain diode parameters such as ideality factor, barrier height and series resistance were calculated and discussed in detail.