期刊
APPLIED SURFACE SCIENCE
卷 475, 期 -, 页码 504-509出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2018.12.239
关键词
Surface passivation; Hydrogenated amorphous silicon; Amorphous/crystalline silicon heterojunction solar cells; Hot wire chemical vapor deposition
类别
资金
- Strategic Priority Research Program [XDA17020403, 6141A01141604]
- Joint Fund of Chinese Academy of Sciences [XDA17020403, 6141A01141604]
- project of Shanghai Municipal Science and Technology Committee [17DZ1201100]
Intrinsic/doped stacked hydrogenated amorphous silicon (a-Si:H) are widely used passivation layers for amorphous/crystalline silicon (a-Si/c-Si) heterojunction solar cells. This work reports that hot wire chemical vapor deposition of doped a-Si:H can significantly modify the property of the underlying intrinsic a-Si:H (a-Si:H(i)) as well as a-Si/c-Si interface passivation, which stems from the in-diffusion of highly reactive atomic hydrogen. Fourier transform infrared spectroscopy, spectroscopic ellipsometry and Raman analyses indicate that the underlying a-Si:H(i) films become more compact and less defected as a result of network reconstruction during doped a-Si:H capping. After this reconstruction, underdense a-Si:H(i) films obtained superior passivation quality than widely used dense layers, despite the inferior quality in the initial state. Effective minority carrier lifetime of c-Si passivated by underdense a-Si:H(i) was 19.9 ms, much higher than 15.2 ms in the case of using dense aSi:H(i). The porous structure of underdense a-Si:H(i) facilitates hydrogen diffusion towards a-Si/c-Si interface and hence a rapid reduction of interface defect densities occurs, accounting for the better passivation quality. SHJ solar cells (160 mu m, 156 x 156 mm(2)) with industry-compatible process were fabricated, yielding the efficiency up to 23.0% with high V-oc values of 741 mV.
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