期刊
APPLIED PHYSICS LETTERS
卷 114, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5098382
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资金
- Beijing Innovation Center for Future Chip (ICFC), Tsinghua University
- Young Chang Jiang Scholars Program
- National Key R&D Program of China [2017YFB0405604]
- National Natural Science Foundation of China [51571128, 51671110]
Large fluctuations of key parameters in cation-based resistive random access memory (RRAM), which originate from stochastic growth of metallic conductive filaments, always impose a significant barrier to the practical application of memory devices. Here, we propose an ordinary bilayer oxide structure of Ag/TaOx/TaOy/Pt (x
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