期刊
APPLIED PHYSICS LETTERS
卷 114, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5093639
关键词
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资金
- Department of Energy, Office of High Energy Physics [DE-SC0015566]
- Office of Fusion Energy Sciences [DE-FC02-93ER54186]
- National Institutes of Health, National Institute for Biomedical Imaging and Bioengineering [EB004866, EB001965]
- U.S. Department of Energy (DOE) [DE-SC0015566] Funding Source: U.S. Department of Energy (DOE)
A laser-driven semiconductor switch (LDSS) employing silicon (Si) and gallium arsenide (GaAs) wafers has been used to produce nanosecond-scale pulses from a 3 mu s, 110 GHz gyrotron at the megawatt power level. Photoconductivity was induced in the wafers using a 532nm laser, which produced 6 ns, 230 mJ pulses. Irradiation of a single Si wafer by the laser produced 110 GHz RF pulses with a 9 ns width and >70% reflectance. Under the same conditions, a single GaAs wafer yielded 24 ns 110 GHz RF pulses with >78% reflectance. For both semiconductor materials, a higher value of reflectance was observed with increasing 110 GHz beam intensity. Using two active wafers, pulses of variable length down to 3 ns duration were created. The switch was tested at incident 110 GHz RF power levels up to 600 kW. A 1-D model is presented that agrees well with the experimentally observed temporal pulse shapes obtained with a single Si wafer. The LDSS has many potential uses in high power millimeter-wave research, including testing of high-gradient accelerator structures. Published under license by AIP Publishing.
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