期刊
APPLIED PHYSICS LETTERS
卷 114, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5095470
关键词
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资金
- National Science Foundation Graduate Research Fellowship [DGE1252522]
- Data Storage Systems Center at Carnegie Mellon University
- Materials Characterization Facility at Carnegie Mellon University [MCF-677785]
Thermal gradients have been predicted to play a large role in compositional segregation leading to failure in phase change memories. We have developed a methodology for isolating thermal-gradient driven segregation effects without interference from the electric field. In Ge2Sb2Te5 functional layers, Sb and Te move along the temperature gradient, while Ge segregates in the opposite direction. The direction of segregation is consistent for devices that were repeatedly melted, as well as for devices that were never melted and remained in the polycrystalline state. The results have implications for the reliability of phase change memories. Published under license by AIP Publishing.
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