期刊
ADVANCED MATERIALS
卷 31, 期 21, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201804841
关键词
cross-bar array architecture; nonvolatile memory; organo-metal halide perovskite; perovskite memory devices; resistive switching
类别
资金
- National Creative Research Laboratory program through the National Research Foundation of Korea (NRF) - Korean Ministry of Science and ICT [2012026372]
- Samsung Electronics Co., Ltd.
- POSCO TJ Park Foundation
Resistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of the long endurance of dynamic random-access memory and the long retention time of flash memories. Recently, resistive memory devices based on organo-metal halide perovskite materials have demonstrated outstanding memory properties, such as a low-voltage operation and a high ON/OFF ratio; such properties are essential requirements for low power consumption in developing practical memory devices. In this study, a nonhalide lead source is employed to deposit perovskite films via a simple single-step spin-coating method for fabricating unipolar resistive memory devices in a cross-bar array architecture. These unipolar perovskite memory devices achieve a high ON/OFF ratio up to 10(8) with a relatively low operation voltage, a large endurance, and long retention times. The high-yield device fabrication based on the solution-process demonstrated here will be a step toward achieving low-cost and high-density practical perovskite memory devices.
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