期刊
ADVANCED FUNCTIONAL MATERIALS
卷 29, 期 24, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201901420
关键词
2D ferroelectricity; 2D ferromagnetism; CrI3; half-metal; MXenes
类别
资金
- NASA [80NSSC17M0047]
- NSF-CREST Center for Innovation, Research and Education in Environmental Nanotechnology (CIRE2N) [HRD-1736093]
- Institutional Development Award (IDeA) INBRE from the National Institute of General Medical Sciences (NIGMS), National Institutes of Health (NIH) [P20GM103475]
- Bioinformatics Research Core of the INBRE
Electrical control of atom-thick van der Waals (vdW) ferromagnets is a key toward future magnetoelectric nanodevices; however, state-of-the-art control approaches are volatile. In this work, introducing ferroelectric switching as an aided layer is demonstrated to be an effective approach toward achieving nonvolatile electrical control of 2D ferromagnets. For example, when a ferromagnetic monolayer CrI3 and ferroelectric MXene Sc2CO2 come together into multiferroic heterostructures, CrI3 is controlled by polarized states P up arrow and P down arrow of Sc2CO2. P up arrow Sc2CO2 does not change the semiconducting nature of CrI3, but surprisingly P down arrow Sc2CO2 makes CrI3 half-metallic. Nonvolatility of the electrical switching between two oppositely ferroelectric polarized states, therefore, indirectly enables nonvolatile electrical control of CrI3 between ferromagnetic semiconductor and half-metal. The heterointerface-induced half-metallicity in CrI3 is intrinsic without resorting to any chemical functionalization or external physical modification, which is rather beneficial to the practical application. This work paves the way for nonvolatile electrical control of 2D vdW ferromagnets and applications of CrI3 in half-metal-based nanospintronics.
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