期刊
ACS NANO
卷 13, 期 5, 页码 5430-5438出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b00201
关键词
MoTe2; MoS2; heterojunction; anti-ambipolar; multivalue inverters; photovoltaic
类别
资金
- National Science Foundation of China [21405109]
- Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China
van der Waals (vdW) p-n heterojunctions formed by two-dimensional nanomaterials exhibit many physical properties and deliver functionalities to enable future electronic and optoelectronic devices. In this report, we demonstrate a tunable and high-performance anti-ambipolar transistor based on MoTe2/MoS2 heterojunction through in situ photoinduced doping. The device demonstrates a high on/off ratio of 10(5) with a large on-state current of several micro-amps. The peak position of the drain-source current in the transfer curve can be adjusted through the doping level across a large dynamic range. In addition, we have fabricated a tunable multivalue inverter based on the heterojunction that demonstrates precise control over its output logic states and window of midlogic through source-drain bias adjustment. The heterojunction also exhibits excellent photodetection and photovoltaic performances. Dynamic and precise modulation of the anti-ambipolar transport properties may inspire functional devices and applications of two-dimensional nanomaterials and their heterostructures of various kinds.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据