15% Efficiency Ultrathin Silicon Solar Cells with Fluorine-Doped Titanium Oxide and Chemically Tailored Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfo nate) as Asymmetric Heterocontact

In order to achieve a high performance-to-cost ratio to photovoltaic devices, the development of crystalline silicon (c-Si) solar cells with thinner substrates and simpler fabrication routes is an important step. Thin-film heterojunction solar cells (HSCs) with dopant-free and carrier-selective configurations look like ideal candidates in this respect. Here, we investigated the application of n-type silicon/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HSCs on periodic nanopyramid textured, ultrathin c-Si (similar to 25 mu m) substrates. A fluorine-doped titanium oxide film was used as an electron-selective passivating layer showing excellent interfacial passivation (surface recombination velocity similar to 10 cm/s) and contact property (contact resistivity similar to 20 m Omega/cm(2)). A high efficiency of 15.10% was finally realized by optimizing the interfacial recombination and series resistance at both the front and rear sides, showing a promising strategy to fabricate high-performance ultrathin c-Si HSCs with a simple and low-temperature procedure.