期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 17, 页码 15781-15787出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b01942
关键词
CrI3; 2D magnet; tunnel junction; spin filtering; tunneling magnetoresistance; DFT calculations
资金
- Semiconductor Research Corporation (SRC) through the nCORE program
- National Science Foundation (NSF) through the E2CDA program [ECCS-1740136]
The recently discovered magnetism of two-dimensional (2D) van der Waals crystals has attracted a lot of attention. Among these materials is CrI3, a magnetic semi-conductor, exhibiting transitions between ferromagnetic and antiferromagnetic orderings under the influence of an applied magnetic field. Here, using first-principles methods based on density functional theory, we explore spin-dependent transport in tunnel junctions formed of face-centered cubic Cu(111) electrodes and a CrI3 tunnel barrier. We find about 100% spin polarization of the tunneling current for a ferromagnetically ordered four-monolayer CrI3 and a tunneling magnetoresistance of about 3000% associated with a change of magnetic ordering in CrI3. This behavior is understood in terms of the spin and wave-vector-dependent evanescent states in CrI3, which control the tunneling conductance. We find a sizable charge transfer from Cu to CrI3, which adds new features to the mechanism of spin filtering in CrI3-based tunnel junctions. Our results elucidate the mechanisms of spin filtering in CrI3 tunnel junctions and provide important insights for the design of magnetoresistive devices based on 2D magnetic crystals.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据