期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 19, 页码 17629-17636出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b01137
关键词
graphene; 2D material; film; chemical vapor deposition; number of layers
资金
- Ministry of Science and Technology of China [2016YFA0200101]
- National Natural Science Foundation of China [51325205, 51290273, 51521091, 51572265, 51861135201]
- Chinese Academy of Sciences [KGZD-EW-303-1, KGZD-EW-T06]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]
- Youth Innovation Promotion Association of Chinese Academy of Sciences
It is essentially important to synthesize uniform graphene films with a controlled number of layers because their properties strongly depend on the number of layers. Although chemical vapor deposition (CVD) on Cu has been widely used to synthesize large-area graphene films, the growth on solid and liquid Cu (L-Cu) suffers from poor thickness uniformity with a great number of adlayers and difficulty in forming continuous films even after a long growth time of hours, respectively. Here, we found that nonuniform graphene films initially grown on solid Cu (S-Cu) foil can rapidly transform into continuously uniform monolayer graphene film on L-Cu within 3 min. Moreover, the films obtained show larger grain size, higher quality, electrical properties, and better performance in organic light-emitting diode applications than the original films grown on S-Cu foil. By using carbon isotope labeling, we revealed that the multilayer-to-monolayer transition of graphene on L-Cu experiences etching-self-aligning-coalescence processes. This two-step CVD method not only opens up a new way for the rapid growth of uniform monolayer graphene films but also provides helpful information for the controlled growth of uniform monolayers of other 2D materials such as monolayer h-BN.
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